000 | 01011pam a2200313 a 4500 | ||
---|---|---|---|
001 | 4696614 | ||
003 | OSt | ||
005 | 20250610120518.0 | ||
008 | 820623s1983 nyua b 001 0 eng | ||
010 | _a 82010842 | ||
020 | _a9788126517909 | ||
040 |
_aDLC _cDLC _dDLC |
||
050 | 0 | 0 |
_aTK7874 _b.G473 1983 |
082 | 0 | 0 |
_a004.00 _219 _bKGH-V |
100 | 1 |
_aGhandhi, Sorab Khushro, _d1928- |
|
245 | 1 | 0 |
_aVLSI fabrication principles : _bsilicon and gallium arsenide / _cSorab K. Ghandhi. |
260 |
_aNew York : _bWiley, _cc1983. |
||
300 |
_axi, 665 p. : _bill. ; _c24 cm. |
||
500 | _a"A Wiley-Interscience publication." | ||
504 | _aIncludes bibliographical references and index. | ||
650 | 0 |
_aIntegrated circuits _xVery large scale integration. |
|
650 | 0 | _aSilicon. | |
650 | 0 | _aGallium arsenide. | |
740 | 0 | _aV.L.S.I. fabrication principles. | |
856 | 4 | 2 | _3Publisher description |
856 | 4 | 1 | _3Table of contents only |
906 |
_a7 _bcbc _corignew _d1 _eocip _f19 _gy-gencatlg |
||
942 |
_2ddc _cBK |
||
999 |
_c30017 _d30017 |