000 01011pam a2200313 a 4500
001 4696614
003 OSt
005 20250610120518.0
008 820623s1983 nyua b 001 0 eng
010 _a 82010842
020 _a9788126517909
040 _aDLC
_cDLC
_dDLC
050 0 0 _aTK7874
_b.G473 1983
082 0 0 _a004.00
_219
_bKGH-V
100 1 _aGhandhi, Sorab Khushro,
_d1928-
245 1 0 _aVLSI fabrication principles :
_bsilicon and gallium arsenide /
_cSorab K. Ghandhi.
260 _aNew York :
_bWiley,
_cc1983.
300 _axi, 665 p. :
_bill. ;
_c24 cm.
500 _a"A Wiley-Interscience publication."
504 _aIncludes bibliographical references and index.
650 0 _aIntegrated circuits
_xVery large scale integration.
650 0 _aSilicon.
650 0 _aGallium arsenide.
740 0 _aV.L.S.I. fabrication principles.
856 4 2 _3Publisher description
856 4 1 _3Table of contents only
906 _a7
_bcbc
_corignew
_d1
_eocip
_f19
_gy-gencatlg
942 _2ddc
_cBK
999 _c30017
_d30017